process CP704 small signal transistors pnp - high current transistor chip 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com princip al device types mpsa55 mpsa56 geometry process details r2 (23 -august 2006) backside collector process epitaxial planar die size 22 x 22 mils die thickness 9.0 mils base bonding pad area 3.7 x 3.7 mils emitter bonding pad area 4.2 x 4.2 mils top side metalization al - 30,000? back side metalization au - 18,000? gross die per 4 inch w afer 23,450
process CP704 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r2 (23 -august 2006)
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